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2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C) 2SC5101 10max 10max 140min 50min 0.5max 20typ 250typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
Unit
A
23.00.3
V
9.50.2
A
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.5 IB2 (A) -0.5 ton (s) 0.24typ tstg (s) 4.32typ tf (s) 0.40typ
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
A 0m
m 00
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
I C - VBE Temperature Characteristics (Typical)
10 (VCE=4V)
10
m
A
IB
=4
30
00
2
150
mA
A
8 Collector Current I C (A)
100m
A
8 Collector Current I C( A)
75 m A
2
6
50 mA
6
4
20mA
1
Cas
(Case
2
25C
2 I C= 10A 5A 0 0 0.5 1.0 Base Current I B( A) 1.5 2.0 0 0
C (
10mA
0
0
1
2
3
4
-30C
125
(Case
1 Base-Emitter Voltage V B E( V)
Temp)
4
e Te mp) Temp )
3.0
2
Collector-Emitter Voltage V C E( V)
(V C E= 4V) 200 DC Cur rent Gain h FE DC Curr ent Gain h F E 300 125C 100 25C -30C
(V C E= 4V)
j - a( C/W)
h FE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
3
Typ
100
Transient Thermal Resistance
1 0.5
50
50
20 0.02
0.1
0.5
1
5
10
20 0.02
0.1
0.5
1
5
10
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
fT - IE Characteristics (Typical)
(VCE=12V) 40 30
Safe Operating Area (Single Pulse)
80
P c - T a Derating
10
30 Collector Curre nt I C( A)
M aximum Power Dissipa ti on P C( W)
10
Cut- off F req uency f T( M H Z)
W
60
10
ith
ms s 0m
Typ
5
D
In
C
fin ite he
20
40
at si nk
1 0.5 Without Heatsink Natural Cooling
10
20
Without Heatsink 0 -0.02 -0.1 -1 Emitter Current I E( A) -10 0.1 3 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
127

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